IRL6283MTRPBF Просмотр технического описания (PDF) - International Rectifier
Номер в каталоге
Компоненты Описание
Список матч
IRL6283MTRPBF Datasheet PDF : 9 Pages
| |||
IRL6283MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qodr
Qsw
Qoss
RG
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
20
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
320
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
4.8
0.50
0.65
1.1
0.8
-3.9
–––
–––
–––
–––
–––
105
9.7
8.9
35
51
44
50
1.1
23
160
116
192
8292
2012
1526
Max.
–––
–––
0.75
0.87
1.5
1.1
–––
1.0
150
100
-100
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 50A
mΩ VGS = 4.5V, ID = 50A
VGS = 2.5V, ID = 50A
V VDS = VGS, ID = 100µA
mV/°C
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ=125°C
nA VGS = 12V
VGS = -12V
S VDS = 10V, ID = 30A
VDS = 10V
nC VGS = 4.5V
ID = 30A
nC VDS = 16V, VGS = 0V
Ω
VDD = 20V, VGS = 4.5V
ns ID = 30A
RG = 1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Typ.
–––
–––
–––
48
84
Max.
211
305
1.2
72
126
Units
Conditions
A MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 30A, VGS = 0V
ns TJ = 25°C, IF = 30A,VDD = 10V
nC di/dt = 200A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 24, 2014
Share Link: 