RMWB24001 Просмотр технического описания (PDF) - Fairchild Semiconductor
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RMWB24001 Datasheet PDF : 7 Pages
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Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Step 3: Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 70mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Typical Characteristics
RMWB24001 24 GHz BA, Pout vs Pin Performance
On-Wafer Measurements, Vd = 4 V, Idq = 70 mA
20
18
16
14
12
24 GHz
10
21 GHz
8
17 GHz
6
4
2
0
-16 -14 -12 -10 -8 -6 -4 -2 0
2
4
6
Input Power (dBm)
8 10
©2004 Fairchild Semiconductor Corporation
RMWB24001 Rev. D
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