RMWB24001 Просмотр технического описания (PDF) - Fairchild Semiconductor
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RMWB24001 Datasheet PDF : 7 Pages
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0.000.11
1.50
1.38
0.48
1.77 2.02
2.38 2.50
1.38
0.715
0.56
0.405
0.975
0.82
0.665
0.12
0.00
0.00 0.11
1.14
2.38 2.50
Dimensions in millimeters
Figure 2. Chip Layout and Bond Pad Locations
Chip Size is 2.50mm x 1.50mm X 100µm. Back of chip is RF and DC Ground.
Drain Supply
Vd=4 V
Bond Wires
100 pF
MMIC Chip
RF IN
10,000 pF
Output Power
Detector Voltage Vdet
3 kΩ
100 pF
100 pF
Bond Wires
RF OUT
Bond Wires
100 pF
10,000 pF
Ground
(Back of Chip)
Note:
Gate Supply Vg
Detector delivers > 0.1 V DC into 3 kΩ load resistor for > +17 dBm output power. If output power level detection is not desired, do
not connect to detector bond pad.
Figure 3. Recommended Application Schematic Circuit Diagram
©2004 Fairchild Semiconductor Corporation
RMWB24001 Rev. D
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