PHM21NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHM21NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM21NQ15T
TrenchMOS™ standard level FET
60
ID
(A)
Tj = 25 °C
40
10 V 6 V
03al07
5V
4.9 V
4.7 V
4.5 V
20
4.3 V
4.1 V
3.9 V
VGS = 3.7 V
0
0
1
2
3
4
5
VDS (V)
60
ID
(A)
VDS > ID x RDSon
40
03al09
20
0
0
150 °C
Tj = 25 °C
2
4 VGS (V) 6
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03al08
80
2.5
RDSon Tj = 25 °C
a
(mΩ)
VGS = 4.7 V 4.9 V 5 V
6V
2
60
10 V
1.5
40
1
20
0.5
03al51
0
0
20
40
ID (A) 60
0
-60
0
60
120
180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10882
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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