PHM21NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHM21NQ15T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM21NQ15T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa15
120
Ider
(%)
80
03aa23
40
40
0
0
50
100
150
200
Tmb (°C)
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
102
ID
(A)
Limit RDSon = VDS / ID
10
DC
1
0
0
50
100
150
200
Tmb (°C)
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
tp = 10 µ s
100 µ s
03al06
1 ms
10 ms
10-1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10882
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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