PHB3N60E Просмотр технического описания (PDF) - Philips Electronics
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PHB3N60E Datasheet PDF : 9 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP3N60E, PHB3N60E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 2.8 A
RDS(ON) ≤ 4.4 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP3N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB3N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
tab
tab
1 gate
2 drain 1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
2.8
1.8
11
83
150
UNIT
V
V
V
A
A
A
W
˚C
December 1998
1
Rev 1.200
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