IRGB30B60KPBF Просмотр технического описания (PDF) - International Rectifier
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IRGB30B60KPBF Datasheet PDF : 14 Pages
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IRGB/S/SL30B60KPbF
10000
1000
Cies
Coes
100
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
12
10
8
6
4
2
0
0
200V
400V
25
50
75
100 125
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 30A; L = 600µH
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τCτ
τ2 τ2
Ri (°C/W) τi (sec)
0.200 0.000428
0.209 0.013031
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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