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IRGB30B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRGB/S/SL30B60KPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)

— 1.95 2.35

IC = 30A, VGE = 15V, TJ = 25°C

VCE(on)

Collector-to-Emitter Voltage

— 2.40 2.75 V IC = 30A, VGE = 15V, TJ = 150°C

— 2.6 2.95

IC = 30A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

3.5 4.5 5.5 V VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Threshold Voltage temp. coefficient

— -10 — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C)

gfe

Forward Transconductance

— 18 — S VCE = 50V, IC = 50A, PW = 80µs

— 5.0 250

VGE = 0V, VCE = 600V

ICES

Zero Gate Voltage Collector Current

— 1000 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C

— 1830 3000

VGE = 0V, VCE = 600V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

— — ±100 nA VGE = ±20V, VCE = 0V

Ref.Fig.

5,6,7

8,9,10

8,9,10

11

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Total Gate Charge (turn-on)

— 102 153

IC = 30A

Qge

Gate-to-Emitter Charge (turn-on)

— 14 21 nC VCC = 400V

Qgc

Gate-to-Collector Charge (turn-on)

— 44 66

VGE = 15V

Eon

Turn-On Switching Loss

— 350 620

IC = 30A, VCC = 400V

Eoff

Turn-Off Switching Loss

Etot

Total Switching Loss

—

—

825 955

1175 1575

f µJ VGE = 15V, RG = 10Ω, L = 200µH

TJ = 25°C

td(on)

Turn-On delay time

— 46 60

IC = 30A, VCC = 400V

tr

Rise time

— 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH

td(off)

Turn-Off delay time

— 185 200

TJ = 25°C

tf

Fall time

— 31 40

Eon

Turn-On Switching Loss

— 635 1085

IC = 30A, VCC = 400V

Eoff

Turn-Off Switching Loss

Etot

Total Switching Loss

—

—

1150 1350

1785 2435

f µJ VGE = 15V, RG = 10Ω, L = 200µH

TJ = 150°C

td(on)

Turn-On delay time

— 46 60

IC = 30A, VCC = 400V

tr

Rise time

— 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH

td(off)

Turn-Off delay time

— 205 235

TJ = 150°C

tf

Fall time

— 32 42

LE

Internal Emitter Inductance

— 7.5 — nH Measured 5mm from package

Cies

Input Capacitance

— 1750 2500

VGE = 0V

Coes

Output Capacitance

— 160 255 pF VCC = 30V

Cres

Reverse Transfer Capacitance

— 60 90

f = 1.0MHz

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

TJ = 150°C, IC = 120A, Vp = 600V

VCC=500V,VGE = +15V to 0V,RG =10Ω

SCSOA

Short Circuit Safe Operating Area

10 — — µs TJ = 150°C, Vp = 600V, RG = 10Ω

VCC=360V,VGE = +15V to 0V

ISC (Peak) Peak Short Circuit Collector Current

— 200 — A

Ref.Fig.

17

CT1

CT4

CT4

CT4

12,14

WF1,WF2

13,15

CT4

WF1

WF2

16

4

CT2

CT3

WF3

WF3

Note  to … are on page 13

2

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