IRFD220 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFD220 Datasheet PDF : 7 Pages
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IRFD220
Typical Performance Curves Unless Otherwise Specified (Continued)
5
VGS = 10V
VGS = 8V
4
VGS = 6V
VGS = 5V
3
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS > ID(ON) x rDS(ON)MAX
8
TJ = -55oC
6
TJ = 25oC
TJ = 125oC
4
1
VGS = 4V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
2
0
0
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
1.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.8
0.6
0.4
VGS = 20V
VGS = 10V
0.2
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25 ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2.2 VGS = 10V, ID = 0.4A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
600
CISS
400
200
0
0
COSS
CRSS
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
IRFD220 Rev. B
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