IRFD220 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFD220 Datasheet PDF : 7 Pages
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IRFD220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFD220
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
0.8
6.4
±20
1.0
0.008
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
85
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V (Figure 9)
200
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 6) 0.8
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) ID = 0.4A, VGS = 10V (Figures 7, 8)
-
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.4A (Figure 11)
0.5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON) VDD = 0.5 x Rated BVDSS, ID ≈≈ 0.8A,
-
tr
RG = 9.1Ω, RL = 74Ω, VGS = 10V,
MOSFET Switching Times are Essentially
-
td(OFF) Independent of Operating Temperature
-
Fall Time
tf
-
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
VGS = 10V, ID ≈ 0.8A, VDS = 0.8 x Rated BVDSS
Qg(TOT) IG(REF) = 1.5mA, (Figure 13) Gate Charge is
-
Qgs
Essentially Independent of Operating Temperature
-
Gate to Drain “Miller” Charge
Qgd
-
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
C RSS
-
Internal Drain Inductance
Internal Source Inductance
LD
Measured from the Drain Modified MOSFET
-
Lead, 2mm (0.08in) from Symbol Showing the
Package to Center of Die Internal Devices
LS
Measured from the Source Inductances D
-
Lead, 2mm (0.08in) from
Header to Source Bonding
LD
Pad
G
LS
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250
µA
-
-
A
-
±100
nA
0.5
0.8
Ω
1.1
-
S
20
40
ns
30
60
ns
50
100
ns
30
60
ns
11
15
nC
6.0
-
nC
5.0
-
nC
450
-
pF
150
-
pF
40
-
pF
4.0
-
nH
6.0
-
nH
Thermal Resistance Junction to Ambient RθJA Free Air Operation
S
-
-
120 oC/W
©2002 Fairchild Semiconductor Corporation
IRFD220 Rev. B
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