GM72V66841ELT Просмотр технического описания (PDF) - Hynix Semiconductor

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GM72V66841ELT

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

Hynix Semiconductor 

GM72V66841ET/ELT

Relationship Between Frequency and Minimum Latency

Parameter

frequency(MHz)

tCK (ns)

Burst stop to

output valid

data hold

Burst stop to

output high

impedance

(CL=2)

(CL=3)

(CL=2)

(CL=3)

Burst stop to write data ignore

-7

-75

-8

- 7K - 7J

Symbol 143 100 133 100 125 100 100 100 100 66 Notes

7 10 7.5 10 8 10 10 10 10 15

lBSR

-1-1 -111-1

lBSR

2222 222222

lBSH

-2-2 -222-2

lBSH

3333 333333

lBSW

0000 000000

Notes : 1. lRCD to lRRD are recommended value.

Rev. 1.1/Apr.01

-9-

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