GM72V66841ELT Просмотр технического описания (PDF) - Hynix Semiconductor
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GM72V66841ELT Datasheet PDF : 10 Pages
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GM72V66841ET/ELT
DC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ= 0 V)
Parameter
-7
Symbol
Max
Operating
current
ICC1
85
Standby current in
power down
Standby current in
power down
(input signal stable)
Standby current in
non power down
(CAS Latency=2)
Standby current in
non power down
(input signal stable)
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current
in power down
ICC3P
Active standby current
in power down
ICC3PS
(input signal stable)
Active standby current
in non power down ICC3N
Active standby current
in non power down ICC3NS
(input signal stable)
Burst ( CL= 2 ) ICC4
operating
current ( CL= 3 ) ICC4 150
Refresh current
ICC5
Self refresh current ICC6
- 75
Max
85
150
-8
Max
80
2
2
0.4
15
12
6
5
30
20
120
150
160
1
0.4
-7K
Max
80
120
-7J
Unit Test conditions Notes
Max
80
mA
Burst length= 1
tRC = min
1, 2, 3
CKE = V IL,
mA tCK = 12 ns
5
CKE=V IL,
6
mA tCK= infinity
6,8
CKE,CS = VIH,
mA tCK = 12ns
4
CKE = V IH,
mA tCK = infinity
4
CKE = V IL,
mA tCK = 12 ns,
DQ = High-Z
1,2,5
CKE = V IL,
mA tCK = infinity
2,6
CKE,CS = VIH,
mA tCK = 12 ns,
1,2,4
DQ = High-Z
CKE = V IH,
mA tCK = infinity
2,9
mA tCK = min
120 mA BL = 4
mA tRC = min
1,2,3
3
mA VIH >=VCC - 0.2 7
VIL <=0.2V
7,8
Rev. 1.1/Apr.01
-4-
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