MBM30LV0032 Просмотр технического описания (PDF) - Fujitsu

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MBM30LV0032

FLASH MEMORY CMOS 32M (4M × 8) BIT NAND-type

Fujitsu 

MBM30LV0032

s COMMAND OPERATION

Table 4 Command Table

Function

1st Cycle

2nd Cycle

Read (1)

00h *1

—

Read (2)

01h *2

—

Read (3)

50h *3

—

Sequential Data Input

80h

—

Page Program

10h

—

Block Erase

60h

D0h

Reset

FFh

—

Status Read

70h

—

ID Read

90h

—

*1: The 00h Command defines starting Address on the 1st half Page.

*2: The 01h Command defines starting Address on the 2nd half Page.

*3: The 50h Command is valid only When SE is low level.

Acceptable Command

During Busy State

8

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