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MBM30LV0032

FLASH MEMORY CMOS 32M (4M × 8) BIT NAND-type

Fujitsu 

MBM30LV0032

s FEATURES

• 3.3 V-only operating voltage (2.7 V to 3.6 V)

Minimizes system level power requirements

• Organization

Memory Cell Array : (4M + 128K) ×8 bit

Data Register : (512 + 16) ×8 bit

• Automatic Program and Erase

Page Program : (512 + 16) Byte

Block Erase : (8K + 256) Byte

• 528 Byte Page Read Operation

Random Access : 7 µs (Max.)

Serial Access : 35 ns (Max.)

• Fast Program and Erase

Program Time : 200 µs (Typ.) / page

Block Erase Time : 2 ms (Typ.) / block

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

• 1,000,000 write/erase cycle guaranteed (ECC system required)

• Command Register Operation

• Package

44(40)-pin TSOP Type II (0.8 mm pitch)

Normal/Reverse Type

• Data Retention: 10 years

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