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CY62146EV30 Просмотр технического описания (PDF) - Cypress Semiconductor

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CY62146EV30
Cypress
Cypress Semiconductor Cypress
CY62146EV30 Datasheet PDF : 18 Pages
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CY62146EV30 MoBL®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied ......................................... –55 °C to + 125 °C
Supply voltage to ground
potential .......................... –0.3 V to + 3.9 V (VCCmax + 0.3 V)
DC voltage applied to outputs
in High-Z state [4, 5] ............ –0.3 V to 3.9 V (VCCmax + 0.3 V)
DC input voltage [4, 5] ....... –0.3 V to 3.9 V (VCC max + 0.3 V)
Output current into outputs (LOW) ............................. 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) .......................... >2001 V
Latch-up Current .................................................... >200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC [6]
CY62146EV30 Industrial / –40 °C to +85 °C 2.2 V to 3.6 V
Automotive-A
Electrical Characteristics
Over the Operating Range
Parameter
Description
VOH
Output high voltage
VOL
Output low voltage
VIH
Input high voltage
VIL
Input LOW Voltage
IIX
Input leakage current
IOZ
Output leakage current
ICC
VCC operating supply current
ISB1
Automatic CE power down
current – CMOS inputs
ISB2 [8]
Automatic CE power down
current – CMOS inputs
Test Conditions
IOH = –0.1 mA
IOH = –1.0 mA, VCC > 2.70 V
IOL = 0.1 mA
IOL = 2.1 mA, VCC > 2.70 V
VCC = 2.2 V to 2.7 V
VCC= 2.7 V to 3.6 V
VCC = 2.2 V to 2.7 V
VCC= 2.7 V to 3.6 V
GND < VI < VCC
GND < VO < VCC, Output disabled
f = fmax = 1/tRC
f = 1 MHz
VCC = VCC(max),
IOUT = 0 mA
CMOS levels
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = fmax (Address and data only),
f = 0 (OE, BHE, BLE and WE),
VCC = 3.60 V
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = 3.60 V
45 ns (Ind’l/Auto-A)
Min
Typ [7]
Max
Unit
2.0
V
2.4
V
0.4
V
0.4
V
1.8
2.2
–0.3
VCC + 0.3 V
VCC + 0.3 V
0.6
V
–0.3
0.8
V
–1
+1
A
–1
+1
A
15
20
mA
2
2.5
1
7
A
1
7
A
Notes
4. VIL(min) = –2.0 V for pulse durations less than 20 ns.
5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100 s ramp time from 0 to Vcc(min) and 200 s wait time after Vcc stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
8. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating.
Document Number: 38-05567 Rev. *H
Page 4 of 18

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