BU806 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
BU806 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTORS
BU806
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
ICEOV
ICES
IEBO
VCE(SAT)
VBE(SAT)
VF
Collector-Emitter
Breakdown Voltage (*)
IC= 100 mA, IB= 0
Collector Cutoff Current VCE = 400 V, VBE(off) = 6 V
Collector Cutoff Current VCE = 400 V, VBE(off) = 0 V
Emitter Cutoff Current
Collector-Emitter
saturation Voltage (*)
VEB= 6 V, IC= 0
IC= 5 A, IB= 250 mA
Base-Emitter Saturation
Voltage (*)
IC= 5 A, IB= 250 mA
Diode forward Voltage (*) IF= 7 A
Min Typ Max Unit
200 -
-
V
-
- 100 µA
-
- 100 µA
-
-
3 mA
-
- 1.5 V
-
- 2.4 V
-
- 3.5 V
SWITCHING TIMES.
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ton
turn-on time
ts
Storage Time
VCC= 100 V; IC= 5 A
IB1= 50mA, IB2= 500 mA
- 0.35 -
- 0.55 -
µs
tf
Fall Time
- 0.2 -
(*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 1.5%
29/09/2012
COMSET SEMICONDUCTORS
2/3
Share Link: 