BU806 Просмотр технического описания (PDF) - Comset Semiconductors
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BU806 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in
a TO-220 plastic package.
They are high voltage, high current devices for fast switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCBO
VCEV
VCEO
VEBO
IC
ICM
IB
PT
tJ
ts
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation at Case Temperature
Junction Temperature
Storage Temperature range
400
400
200
6
8
15
2
Tmb < 25°C
60
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
2.08
70
Unit
°C/W
29/09/2012
COMSET SEMICONDUCTORS
1/3
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