BP103 Просмотр технического описания (PDF) - Siemens AG

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BP103

Silicon NPN Phototransistor

Siemens AG 

Relative spectral sensitivity

Srel = f (λ)

Photocurrent

IPCE = f (Ee), VCE = 5 V

BP 103

Total power dissipation

Ptot = f (TA)

Output characteristics

IC = f (VCE), IB = Parameter

Output characteristics

IC = f (VCE), IB = Parameter

Dark current

ICEO = f (VCE), E = 0

Photocurrent

IPCE/IPCE25o = f (TA), VCE = 5 V

Dark current

ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0

Collector-emitter capacitance

CCE = f (VCE), f = 1 MHz, E = 0

Semiconductor Group

215

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