BD435 Просмотр технического описания (PDF) - Comset Semiconductors
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BD435 Datasheet PDF : 3 Pages
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NPN BD433 – BD435 – BD437
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector cut-off
current
ICES
Collector cut-off
current
IE= 0, VCB= 22 V
IE= 0, VCB= 32 V
IE= 0, VCB= 45 V
VBE= 0, VCE= 22 V
VBE= 0, VCE= 32 V
VBE= 0, VCE= 45 V
IEBO
Emitter cut-offcurrent
IC= 0
VEB= 5 V
VCEO(SUS)
Collector-Emitter
sustaning Voltage (*)
IB= 0
IC= 100 mA
VCE(SAT)
Collector-Emitter
IC= 2 A
saturation Voltage (*) IB= 200 mA
VBE
Base-Emitter
Voltage(*)
IC= 2 A
VCE= 1 V
IC= 10 mA
VCE= 5 V
hFE
DC Current Gain (*)
IC= 500 mA
VCE= 1 V
IC= 2 A
VCE= 1 V
fT
Transition frequency
IC= 250 mA
VCE= 1 V
1. Measured under pulse conditions :tP <300µs, δ <1.5
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
BD433
BD435
BD437
Min Typ Max Unit
- - 100
µA
- - 100
- - 1 mA
22 - -
32 -
-
V
45 - -
-
- 0.5 V
0.6
-
- 1.1 V
1.2
40 - 130
30 - 130
85 - 140 -
50 -
40 -
3-
-
-
- MHz
25/09/2012
COMSET SEMICONDUCTORS
2|3
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