BD435 Просмотр технического описания (PDF) - Comset Semiconductors

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BD435

SILICON NPN POWER TRANSISTORS

Comset Semiconductors 

NPN BD433 – BD435 – BD437

SILICON NPN POWER TRANSISTORS.

The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package.

They are recommended for use in medium power linear and switching applications.

PNP complements are BD434-BD436-BD438.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage (IE= 0)

VCEO

VEBO

IC

ICM

IB

PC

TJ

TStg

Collector-Emitter Voltage (IB= 0)

Emitter-Base Voltage (Ic= 0)

Collector Current

Collector Current Peak

Base Current

Total power Dissipation

Junction Temperature

Storage Temperature

Value

Unit

BD433

22

BD435

32

V

BD437

45

BD433

22

BD435

32

V

BD437

45

5

V

4

7

A

1

A

TC = 25°C

36

W

150

°C

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-c

RthJ-a

Thermal Resistance, Junction-Case

Thermal Resistance, Junction-ambient in free air

Value

3.5

100

Unit

°C/W

°C/W

25/09/2012

COMSET SEMICONDUCTORS

1|3

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