APT6030BN Просмотр технического описания (PDF) - Comset Semiconductors

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APT6030BN

N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

APT6030BN

REVERSE DIODE

Symbol

Ratings

Test Condition(s) Min

IS

Continuous Source Current. (Body Diode)

-

ISM

Pulsed Source Current. (Body Diode)

-

VSD

Diode Forward Voltage

VGS = 0 V, Is = -ID(Cont) -

Trr

Reverse Recovery Time

Is = -ID(Cont)

-

Qrr

Reverse Recovery Charge

di/dt = 100 A/µs

-

Typ Max Unit

-

-

23

92

A

- 1.3 V

480 960 ns

8 16 µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

Ratings

SOA1 Safe Operating Area

SOA2

ILM

Safe Operating Area

Inductive Current Clamped

Test Condition(s)

VDS= 0.4VDSS

IDS= PD/0.4VDSS

t= 1 sec

IDS= ID(Cont)

VDS= PD/ ID(Cont)

t= 1 sec

Min Typ Max Unit

360

W

360

W

92

A

22/10/2012

COMSET SEMICONDUCTORS

3/4

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