APT6030BN Просмотр технического описания (PDF) - Comset Semiconductors

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APT6030BN

N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

APT6030BN

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

600 -

-

V

VGS(th)

IDSS

IGSS

ID(on)

Gate-threshold Voltage

ID=1 mA, VDS= VGS

2

Zero Gate Voltage Drain Current

VDS= 600 V, VGS= 0 V

Tj= 25 °C

VDS= 0.8 VDSS, VGS= 0 V

Tj= 125 °C

-

-

Gate-Source leakage Current VGS= 30 V, VDS= 0 V

-

On State Drain Current

VGS= 30 V

VDS >ID(on)xRDS(on)Max

-

-

4

V

- 250 µA

-

1 mA

- 100 nA

- 23 A

RDS(on)

Drain-Source on Resistance

0.5ID(Cont), VGS= 10 V

-

- 0.3 Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

CISS

COSS

CRSS

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Turn-on Delay Time

Rise time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate Source Charge

Gate-Drain Charge

Test Condition(s) Min Typ Max Unit

VGS= 0 V, VDS= 25 V

f= 1MHz

VDD= 300 V, VGS= 15 V

IDS= ID(Cont) @ 25°C

RGS= 1.8 Ω

VDD= 300 V, VGS= 10 V

IDS= ID(Cont) @ 25°C

- 2905 3500

- 505 710 pF

- 190 285

- 20 40

-

-

35

90

70

130

ns

- 50 100

140 210

18 27 nC

75 110

22/10/2012

COMSET SEMICONDUCTORS

2/4

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