2N5415 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
2N5415 Datasheet PDF : 3 Pages
| |||
PNP 2N5415 – 2N5416
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
IEBO
VCEO
hFE
VCE(SAT)
VBE
fT
Cc
Ce
Ratings
Collector Cutoff
Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage (*)
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage
(*)
Transition frequency
Collector Capacitance
Emitter Capacitance
Test Condition(s)
VCB = -175 V, IE =0
VCB = -280 V, IE =0
VEB = -4 V, IC =0
VEB = -6 V, IC =0
IC = -10 mA, IB =0
IC = -50 mA
VCE = -10 V
IC = -50 mA
IB = -5 mA
IC = -50 mA
VCE = -10 V
IC = -10 mA
VCE = -10 V, f = 5 MHz
IE = ie = 0, VCB = -10 V
f = 1 MHz
IC = ic = 0, VEB = -6 V
f = 1 MHz
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
Min
-
-
-200
-300
30
30
-
-
15
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-50
-20
-
-
150
120
-2.5
-1.5
-
15
75
Unit
µA
µA
V
-
V
V
MHz
pF
pF
(*) Pulse conditions : tp < 300 µs, δ =1.5%
21/09/2012
COMSET SEMICONDUCTORS
2/3
Share Link: 