2N5415 Просмотр технического описания (PDF) - Comset Semiconductors
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2N5415 Datasheet PDF : 3 Pages
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PNP 2N5415 – 2N5416
HIGH VOLTAGE TRANSISTORS
The 2N5415 and 2N5416 are PNP transistors mounted in TO-39 metal case .
They are intended for use in high-voltage switching and linear amplifier applications.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (Ib = 0)
VCBO
Collector-Base Voltage (Ie = 0)
VEBO
Emitter-Base Voltage (Ic = 0)
IC
Collector Current
ICM
Peak Collector Current
IBM
Peak Base Current
PD
Total Power Dissipation
Tamb = 50°C
Tcase = 25°C
TJ
Junction Temperature
TStg
Storage Temperature Range
Tamb
Operating Ambient Temperature
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
2N5415
2N5416
Value
-200
-300
-200
-350
-4
-6
-200
-400
-200
1
10
200
-65 to +200
-65 to +150
Unit
V
V
V
mA
mA
mA
W
°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient
RthJ-c
Thermal Resistance, Junction to case
Value
150
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
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