SPD08P06PG(2008) Просмотр технического описания (PDF) - Infineon Technologies

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SPD08P06PG
(Rev.:2008)

SIPMOS® Power-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Symbol Conditions

SPD08P06P G G

min.

Values

typ.

Unit

max.

Thermal resistance,

junction - case

R thJC

-

-

3.6 K/W

Thermal resistance,

junction - ambient,leaded

R thJA

-

-

-

SMD version, device on PCB:

R thJA minimal footprint

-

-

75

K/W

6 cm2 cooling area1)

-

-

5700

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-60

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=-250 µA -2.1

-3.0

-4

Zero gate voltage drain current

Gate-source leakage current

I DSS

V DS=-60 V, V GS=0 V,

T j=25 °C

-

V DS=-60 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=-20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=-6.2 V, I D=-10 A

-

-0.1

-1 µA

-10

-100

-10

-100 nA

230

300 mΩ

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-6.2 A

2.5

4.9

-S

1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 ( one layer, 70µ, thick) copper area for drain connection.

PCB is vertical without blown air.

Rev 1.9

page 2

2008-10-13

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