SSD2025 Просмотр технического описания (PDF) - Fairchild Semiconductor

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SSD2025

Dual N-CHANNEL POWER MOSFET

Fairchild Semiconductor 

SSD2025

Dual N-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol

BVDSS

VGS(th)

IGSS

IDSS

IDON

RDS(on)

gFS

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Characteristic

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

On-State Drain-Source Current

Static Drain-Source

On-State Resistance

②

Forward Transconductance ②

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Min. Typ. Max. Units

Test Condition

60 -- -- V VGS=0V,ID=250μA

1.0 -- -- V VDS= 5V ,ID=250μA

-- -- 100 nA VGS=20V

-- -- -100 nA VGS=-20V

--

--

--

--

1.0

25

μA

VDS=48V

VDS=48V,TC=55℃

10 -- -- A VDS=5V ,VGS=10V

-- 0.065 0.1 Ω VGS=10V,ID=3.3A

-- 0.084 0.2

VGS=4.5V,ID=2.5A

-- 7.0 -- S VDS =15V,ID=3.3A

-- 16 25

-- 18 30 ns VDD=30V,ID=1.0A,

-- 40 50

R0=6.0Ω,

-- 23 40

②③

-- 18 30

-- 2.3 --

-- 4.7 --

VDS=30V,VGS=10V,

nC ID=3.3A

②③

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

Continuous Source Current

Modified MOSFET Symbol

○D

IS (Body Diode)

--

--

1.7

A

Showing the Integral Reverse

P-N Junction Rectifier

─ ││ ○

││

┘ │─ ─ │ ││ │◀─│▲──

│ G

○S

VSD Diode Forward Voltage ② --

trr Reverse Recovery Time ② --

-- 1.2 V TA=25℃,IS=1.7A,VGS=0V

70 100 ns TA=25℃,IF=1.7A,diF/dt=100A/μs

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

③ Essentially Independent of Operating Temperature

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