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SSD2025

Dual N-CHANNEL POWER MOSFET

Fairchild Semiconductor 

Dual N-CHANNEL POWER MOSFET

FEATURES

! Lower RDS(on)

! Improved Inductive Ruggedness

! Fast Switching Times

! Low Input Capacitance

! Extended Safe Operating Area

! Improved High Temperature Reliability

Product Summary

Part Number

SSD2025

BVDSS

60V

RDS(on)

0.10Ω

ID

3.3A

SSD2025

8 SOIC

S1 1

G1 2

S2 3

G2 4

Top View

8 D1

7 D1

6 D2

5 D2

D1,D2

D1,D2

G1 ,G2

▼

S1 ,S2

N -Channel MOSFET

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

PD

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TA=25℃

Continuous Drain Current TA=70℃

Drain Current-Pulsed

①

Gate-to-Source Voltage

Total Power Dissipation ( TA=25℃ )

( TA=70℃ )

Operating and Junction Storage

Temperature Range

Value

60

3.3

2.6

10.0

±20

2.0

1.3

- 55 to +150

Units

V

A

A

V

W

℃

Thermal Resistance

Symbol

RθJA

Characteristic

Junction-to-Ambient

Typ.

--

Max.

62.5

Units

℃/W

Rev. A1

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