VND670SP(2003) Просмотр технического описания (PDF) - STMicroelectronics

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VND670SP
(Rev.:2003)

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER (BRIDGE CONFIGURATION)

STMicroelectronics 

VND670SP

Figure 1: Test conditions for High Side switching times measurement.

VOUTA, B

80%

(dVOUT/dt)on

10%

90%

(dVOUT/dt)off

t

VINA, B

td(on) tr

td(off) tf

t

Figure 2: Test conditions for external Power MOSFET switching times measurement.

VgsA, B

80%

90%

10%

Vpw

tdong

trg

20%

t

tdoffg

tfg

t

Figure 3: Definition of the external Power MOSFET turn-on dead time tdel

INA

INB

OUTA

VgsA

tdel

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