IMB3AT110(RevA) Просмотр технического описания (PDF) - ROHM Semiconductor

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IMB3AT110
(Rev.:RevA)

General purpose (dual digital transistors)

ROHM Semiconductor 

Transistors

EMB3 / UMB3N / IMB3A

!Electrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Input resistance

∗ Transition frequency of the device

Symbol Min. Typ. Max. Unit

Conditions

BVCBO −50

−

−

V IC=−50µA

BVCEO −50

−

−

V IC=−1mA

BVEBO

−5

−

−

V IE=−50µA

ICBO

−

−

−0.5 µA VCB=−50V

IEBO

−

−

−0.5 µA VEB=−4V

VCE (sat)

−

− −0.3 V IC/IB=−5mA/−2.5mA

hFE

100 250 600

− VCE=−5V, IC=−1mA

fT

−

250

−

MHz VCE=10mA, IE=−5mA, f=100MHz

∗

R1

3.29 4.7 6.11 kΩ

−

!Electrical characteristic curves

1k

VCE=−5V

500

200

100

Ta=100°C

25°C

50

−40°C

20

10

5

2

1

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collector

current

−1

−500m

−200m

−100m

−50m

Ta=100°C

25°C

−40°C

lC/lB=20

−20m

−10m

−5m

−2m

−1m

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation

voltage vs. collector current

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