IMB3AT110(RevA) Просмотр технического описания (PDF) - ROHM Semiconductor
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IMB3AT110 Datasheet PDF : 2 Pages
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Transistors
EMB3 / UMB3N / IMB3A
General purpose (dual digital transistors)
EMB3 / UMB3N / IMB3A
!Features
1) Two DTA143T chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
!Structure
Dual PNP digital transistor
(each with single built in resistor)
The following characteristics apply to both DTr1 and DTr2.
!External dimensions (Units : mm)
EMB3, UMB3N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol: B3
IMB3A
!Equivalent circuit
EMB3, UMB3N
(3) (2) (1)
R1
DTr2
DTr1
R1
(4) (5) (6)
R1=4.7kΩ
IMB3A
(4) (5) (6)
R1
DTr2
DTr1
R1
(3) (2) (1)
R1=4.7kΩ
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol: B3
!Packaging specifications
Type
EMB3
UMB3N
IMB3N
Package
Code
Basic ordering unit (pieces)
T2R
8000
−
−
Taping
TN
3000
−
−
T110
3000
−
−
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power EMB3,UMB3N
PC
dissipation
IMB3A
Junction temperature
Tj
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Tstg
Limits
−50
−50
−5
−100
150 (TOTAL)
300 (TOTAL)
150
−55~+150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
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