FCP4N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCP4N60 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
10 Top :
V
GS
15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
0.1
0.1
* Notes :
1. 250μs Pulse Test
2. T = 25oC
C
1
10
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
* Note
1. V = 40V
DS
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4
3
V = 10V
GS
2
V = 20V
1
GS
* Note : T = 25oC
J
0
0.0
2.5
5.0
7.5
10.0
12.5
I , Drain Current [A]
D
101
100
10-1
0.2
150oC
25oC
* Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
V , Source-Drain Voltage [V]
SD
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
100
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
C
iss
* Notes :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
V = 120V
DS
10
V = 300V
DS
V = 480V
DS
8
6
4
2
* Note : I = 3.9A
D
0
0
5
10
15
Q , Total Gate Charge [nC]
G
©2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. C0
3
www.fairchildsemi.com
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