FCP4N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCP4N60 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FCP4N60
Device
FCP4N60
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
VGS = 0V, ID = 250μA, TJ = 150°C
--
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 3.9A
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 2.0A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.0A
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 480V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, ID = 3.9A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 480V, ID = 3.9A
VGS = 10V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.9A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 3.9A
dIF/dt =100A/μs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
650
0.6
700
--
--
--
--
--
1.0
3.2
415
210
19.5
12
32
16
45
36
30
12.8
2.4
7.1
--
--
--
277
2.07
Max Unit
--
V
--
V
-- V/°C
--
V
1
μA
10
μA
100 nA
-100 nA
5.0
V
1.2
Ω
--
S
540 pF
275 pF
--
pF
16
pF
--
pF
45
ns
100 ns
85
ns
70
ns
16.6 nC
--
nC
--
nC
3.9
A
11.7
A
1.4
V
--
ns
--
μC
©2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. C0
2
www.fairchildsemi.com
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