30F124 Просмотр технического описания (PDF) - Toshiba

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30F124

Discrete IGBT - 30F124 / GT30F124 / 300V 200A / TO-220SIS Package

Toshiba 

Product Lineup

Circuit Configurations Single

Gate

For soft switching

Collector Built-in FRD

Gate

Collector

Emitter

Emitter

IGBTs for Soft-Switching Applications

Main

Applications

Features

Part Number

Absolute Maximum Ratings

VCES

(V)

IC

PC

Tj

DC Pulsed TC = 25˚C (˚C)

(A) (A)

(W)

Package

Circuit

Configuration

(*1)

VCE(sat) Typ.

tf Typ.

@IC @VGE

Load

(V) (A) (V) (μs) (*2)

Remarks

AC 200 V

GT30J322 600 30 100

75

150 TO-3P(N)IS Built-in FRD 2.1 50 15 0.25 R

GT35J321 600 37 100

75

150 TO-3P(N)IS Built-in FRD 1.9 50 15 0.19 R

GT40J321

600 40 100

120

150 TO-3P(N) Built-in FRD 2.0 40 15 0.11 R Fast switching

GT40J322

600 40 100

120

150 TO-3P(N) Built-in FRD 1.7 40 15 0.2 R

GT40J323

600 40 100

170

150 TO-3P(N) Built-in FRD 2.0 40 15 0.06 R Fast switching

GT40J325 600 40 100

80

150 TO-3P(N)IS Built-in FRD 1.45 40 15 0.2 R 6th generation

GT50J322

600 50 100

130

150 TO-3P(LH) Built-in FRD 2.1 50 15 0.25 R

GT50J322H 600 50 100

130

150 TO-3P(LH) Built-in FRD 2.2 50 15 0.11 R Fast switching

GT50J327

600 50 100

140

150 TO-3P(N) Built-in FRD 1.9 50 15 0.19 R

6th generation

GT50J341

600 50 100

200

175 TO-3P(N) Built-in FRD 1.6 50 15 0.15 R

Tj = 175˚C

AC 100 V

AC 200 V

GT50J328

600 50 120

140

150 TO-3P(N) Built-in FRD 2.0 50 15 0.10 R Fast switching

GT60J321

600 60 120

200

150 TO-3P(LH) Built-in FRD 1.55 60 15 0.30 R

GT60J323

600 60 120

170

150 TO-3P(LH) Built-in FRD 1.9 60 15 0.16 R

GT60J323H 600 60 120

170

150 TO-3P(LH) Built-in FRD 2.1 60 15 0.12 R Fast switching

GT15M321 900 15 30

55

150 TO-3P(N)IS Built-in FWD 1.8 15 15 0.20 R

GT50M322 900 50 120

156

150 TO-3P(N) Built-in FWD 2.1 60 15 0.25 R

GT60M324 900 60 120

254

175 TO-3P(N) Built-in FWD 1.7 60 15 0.11 R Tj = 175˚C

GT50N322A 1000 50 120

156

150 TO-3P(N) Built-in FWD 2.2 60 15 0.10 R Fast switching

GT50N324 1000 50 120

150

150 TO-3P(N) Built-in FWD 1.9 60 15 0.11 R 6th generation

GT60N321 1000 60 120

170

150 TO-3P(LH) Built-in FWD 2.3 60 15 0.25 R

GT40T321 1500 40 80

230

175 TO-3P(N) Built-in FWD 2.15 40 15 0.24 R Tj = 175˚C

*1 Abbreviations in the “Circuit Configuration” column

FRD: Fast Recovery Diode, FWD: Free-Wheeling Diode

*2 Abbreviation in the “Load” column

R : Resistive load

: New product

–9–

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