W40S01 Просмотр технического описания (PDF) - Cypress Semiconductor

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W40S01

SDRAM Buffer - 4 DIMM

Cypress Semiconductor 

W40S01-04

Absolute Maximum Ratings

Stresses greater than those listed in this table may cause per-

manent damage to the device. These represent a stress rating

only. Operation of the device at these or any other conditions

above those specified in the operating sections of this specifi-

cation is not implied. Maximum conditions for extended peri-

ods may affect reliability

Parameter

VDD, VIN

TSTG

TA

TB

Description

Voltage on any pin with respect to GND

Storage Temperature

Operating Temperature

Ambient Temperature under Bias

Rating

Unit

–0.5 to +7.0

V

–65 to +150

°C

0 to +70

°C

–55 to +125

°C

DC Electrical Characteristics: TA = 0°C to +70°C, VDDQ3 = 3.3V±5%

Parameter

Description

Test Condition/

Comments

Min

Typ

Max

Unit

IDD

3.3V Supply Current

BUF_IN = 100 MHz

320

mA

IDD Tristate

3.3V Supply Current in Three-state

BUF_IN = 100 MHz

5

mA

Logic Inputs (BUF_IN, OE, SCLOCK, SDATA)

VIL

Input Low Voltage

VIH

Input High Voltage

IILEAK

Input Leakage Current, BUF_IN

IILEAK

Input Leakage Current[3]

Logic Outputs (SDRAM0:17)[4]

GND–0.3

2.0

–5

–20

0.8

V

VDDQ3+0.5 V

+5

µA

+5

µA

VOL

Output Low Voltage

VOH

Output High Voltage

IOL

Output Low Current

IOH

Output High Current

Pin Capacitance/Inductance

IOL = 1 mA

IOH = –1 mA

VOL = 1.5V

VOH = 1.5V

3.1

70

110

65

100

50

mV

V

185

mA

160

mA

CIN

Input Pin Capacitance (Except

BUF_IN)

5

pF

COUT

Output Pin Capacitance

LIN

Input Pin Inductance

Notes:

3. OE, SCLOCK, and SDATA logic pins have a 250-kΩ internal pull-up resistor (not CMOS level).

4. Outputs loaded by 6" 60Ω transmission lines with 20-pF capacitors.

6

pF

7

nH

8

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