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STW45NM60

N-channel 650V@Tjmax - 0.09Ω- 45A - TO-247 MDmesh™ Power MOSFET

STMicroelectronics 

STW45NM60

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

Test conditions

VDD = 250V, ID = 22.5A

RG = 4.7Ω VGS = 10V

Figure 13

VDD = 400V, ID = 45A,

RG = 4.7Ω, VGS = 10V

Figure 13

Min.

Typ. Max. Unit

30

ns

20

ns

16

ns

23

ns

40

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM

VSD (1)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 45A, VGS = 0

ISD = 45A,

di/dt = 100A/µs,

VDD = 100 V, Tj = 25°C

Figure 15

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 45A,

di/dt = 100A/µs,

VDD = 100 V, Tj = 150°C

Figure 15

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Typ.

508

10

40

650

14

43

Max. Unit

45 A

180 A

1.5 V

ns

µC

A

ns

µC

A

5/12

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