STW45NM60 Просмотр технического описания (PDF) - STMicroelectronics
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STW45NM60 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STW45NM60
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
Zero gate voltage
IDSS Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
600
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
10 µA
100 µA
VGS = ±30V
±100 nA
VDS = VGS, ID = 250µA
3 4 5V
VGS = 10V, ID = 22.5A
0.09 0.11 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward transconductance
VDS > ID(on) x RDS(on)max, ID=
22.5A
15
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3800
1250
80
pF
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 480V
340
pF
RG Gate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
1.4
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400V, ID = 45A,
VGS = 10V
Figure 14
96 134 nC
31
nC
43
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/12
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