IDT723642L(2015) Просмотр технического описания (PDF) - Integrated Device Technology

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IDT723642L
(Rev.:2015)

CMOS SyncBiFIFO 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2

Integrated Device Technology 

IDT723622/723632/723642 CMOS SyncBiFIFO™

256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2

COMMERCIAL TEMPERATURE RANGE

DETERMINING ACTIVE CURRENT CONSUMPTION AND POWER DISSIPATION

The ICC(f) current for the graph in Figure 1 was taken while simultaneously reading and writing a FIFO on the IDT723622/723632/723642 with CLKA

and CLKB set to fS. All data inputs and data outputs change state during each clock cycle to consume the highest supply current. Data outputs were

disconnected to normalize the graph to a zero capacitance load. Once the capacitance load per data-output channel and the number of these device's

inputs driven by TTL HIGH levels are known, the power dissipation can be calculated with the equation below.

CALCULATING POWER DISSIPATION

With ICC(f) taken from Figure 1, the maximum power dissipation (PT) of these FIFOs may be calculated by:

PT = VCC x [ICC(f) + (N x ΔICC x dc)] + Σ(CL x VCC2 X fo)

where:

N

=

ΔICC =

dc

=

CL

=

fo

=

number of outputs = 36

increase in power supply current for each input at a TTL HIGH level

duty cycle of inputs at a TTL HIGH level of 3.4 V

output capacitance load

switching frequency of an output

300

250

200

150

100

fdata = 1/2 fS

TA = 25°C

CL = 0pF

VCC = 5.0V

VCC = 5.5V

VCC = 4.5V

50

0

0

10

20

30

40

50

60

70

80

90

fS ⎯ Clock Frequency ⎯ MHz

3022 drw 03a

Figure 1. Typical Characteristics: Supply Current (ICC) vs Clock Frequency (fS)

6

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