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LH5PV16256

CMOS 4M (256K × 16) Pseudo-Static RAM

Sharp Electronics 

LH5PV16256 CMOS 4M (256K × 16) Pseudo-Static RAM

FEATURES

• 262,144 words × 16 bit organization

• Power supply: +3.0 ± 0.15 V

• Access time: 120 ns (MAX.)

• Cycle time: 190 ns (MIN.)

• Power consumption (MAX.):

126 mW (Operating)

94.5 µW (Standby = CMOS input level)

220.5 µW

(Self-refresh = CMOS input level)

• LVTTL compatible I/O

• Available for address refresh,

auto-refresh, and self-refresh modes

• 2,048 refresh cycles/32 ms

• Address non-multiple

• Available for byte write mode using UWE

and LWE pins

• Package:

44-pin, TSOP (Type II)

• Process: Silicon-gate CMOS

• Operating temperature: 0 - 70°C

• Not designed or rated as radiation

hardened

DESCRIPTION

The LH5PV16256 is a 4M bit Pseudo-Static RAM with

a 262,144 words × 16 bit organization.

PIN CONNECTIONS

44-PIN TSOP (Type II)

TOP VIEW

LWE 1

UWE 2

A0 3

A1 4

A2 5

A3 6

A4 7

A5 8

A6 9

A17 10

CS 11

A16 12

A15 13

A14 14

A13 15

A12 16

A11 17

A10 18

A9 19

A8 20

A7 21

CE 22

44 GND

43 I/O15

42 I/O14

41 I/O13

40 I/O12

39 I/O11

38 I/O10

37 I/O9

36 I/O8

35 VCC

34 VCC

33 RFSH

32 I/O7

31 I/O6

30 I/O5

29 I/O4

28 I/O3

27 I/O2

26 I/O1

25 I/O0

24 OE

23 GND

Figure 1. Pin Connections

5PV16256S-1

1

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