T700N Просмотр технического описания (PDF) - Infineon Technologies

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T700N

Netz-Thyristor Phase Control Thyristor

Infineon Technologies 

N

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T700N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

PereiondinscdhaetVeonrwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max

repetitive peak forward off-state and reverse voltages

Elektrische Eigenschaften

Vorwärts-Stossspitzensperrspannung

Tvj = -40°C... Tvj max

non-repetitive peak forward off-state voltage

VDRM,VRRM

VDSM

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

Tvj = +25°C... Tvj max

VRSM

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

Stossstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

ITRMSM

TC = 85 °C

ITAVM

TC = 55 °C, θ = 180°sin, tP = 10 ms ITAVM

ITRMS

Tvj = 25 °C °C, tP = 10 ms

Tvj = Tvj max, tP = 10 ms

Tvj = 25 °C, tP = 10 ms

Tvj = Tvj max, tP = 10 ms

DIN IEC 60747-6

f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs

Tvj = Tvj max, vD = 0,67 VDRM

5.Kennbuchstabe / 5th letter F

ITSM

I²t

(diT/dt)cr

(dvD/dt)cr

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlasskennlinie 200 A ≤ iT ≤ 3500 A

on-state characteristic

v T = A + B ⋅ iT + C ⋅ ln (iT + 1) + D ⋅ iT

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

Tvj = Tvj max, iT = 2850 A

Tvj = Tvj max, iT = 650 A

Tvj = Tvj max

Tvj = Tvj max

Tvj = Tvj max

Tvj = 25 °C, vD = 12V

Tvj = 25 °C, vD = 12V

Tvj = Tvj max, vD = 12V

Tvj = Tvj max, vD = 0,5 VDRM

Tvj = Tvj max, vD = 0,5 VDRM

Tvj = 25°C, vD = 12V

Tvj = 25°C, vD = 12V, RGK ≥ 10 Ω

iGM = 1 A, diG/dt = 1 A/µs,

tg = 20 µs

Tvj = Tvj max

vD = VDRM, vR = VRRM

DIN IEC 60747-6

Tvj = 25 °C, iGM = 1 A,

diG/dt = 1 A/µs

vT

V(TO)

rT

A=

B=

C=

D=

IGT

VGT

IGD

VGD

IH

IL

iD, iR

tgd

1800 V

2000 V

2200 V

1800 V

2000 V

2200 V

1900 V

2100 V

2300 V

1500 A

700 A

1040 A

1630 A

13500 A

12200 A

911 10³ A²s

744 10³ A²s

200 A/µs

1000 V/µs

max.

2,32 V

1,25 V

0,95 V

0,45 mΩ

9,247E-01

4,032E-04

-1,670E-02

7,035E-03

max. 250 mA

max. 2,2 V

max.

max.

max.

10 mA

5 mA

0,25 V

max. 300 mA

max. 1500 mA

max. 100 mA

max.

4 µs

prepared by: H.Sandmann

approved by: M.Leifeld

date of publication: 2009-03-26

revision:

2.0

IFBIP D AEC / 2009-03-13, H.Sandmann

A 13/09

Seite/page 1/10

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