STTH6004W Просмотр технического описания (PDF) - STMicroelectronics
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STTH6004W Datasheet PDF : 6 Pages
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STTH6004W
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Z th(j-c)/Rth(j-c)
1.0
0.9
Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04
1.E-03
tP (s)
1.E-02
1.E-01
1.E+00
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values)
IRM(A)
45
40
IF=IF(AV)
VR=200V
Tj=125°C
35
30
25
20
15
10
5
0
dIF /dt(A/µs)
0
50 100 150 200 250 300 350 400 450 500
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
t rr (ns)
300
250
IF=IF(AV)
VR=200V
Tj=125°C
200
150
100
50
0
0
dIF /dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
Qrr (nC)
3000
2500
IF=IF(AV)
VR=200V
Tj=125°C
2000
1500
1000
500
0
0
dIF /dt(A/µs)
100
200
300
400
500
Figure 7: Reverse recovery softness factor
versus dIF/dt (typical values)
SFACTOR
0.8
0.7
IF < 2 x IF(AV)
VR=200V
Tj=125°C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
dI F /dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8: Relative variations of dynamic
parameters versus junction temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
IRM & tRR
QRR
50
SFACTOR
Tj (°C)
75
IF=IF(AV)
VR=200V
Reference: Tj=125°C
100
125
3/6
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