W14NK50Z(2003) Просмотр технического описания (PDF) - STMicroelectronics
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W14NK50Z
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
W14NK50Z Datasheet PDF : 14 Pages
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STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
0.34 0.38
Ω
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 8 V, ID = 6 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 6 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 12 A,
VGS = 10V
Min.
Typ.
12
2000
238
55
150
Typ.
24
16
69
12
31
Max. Unit
S
pF
pF
pF
pF
Max. Unit
ns
ns
92
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 6 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
54
12
9.5
9
20
Max. Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
12
A
48
A
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs
VDD = 35V, Tj = 150°C
(see test circuit, Figure 5)
470
ns
3.1
µC
13.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14
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