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W14NK50Z
(Rev.:2003)

N-CHANNEL500V-0.34Ω-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tj

Operating Junction Temperature

Tstg

Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤14A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Value

STP14NK50Z

STB14NK50Z/-1

STP14NK50ZFP

STW14NK50Z

500

500

± 30

14

14 (*)

14

7.6

7.6 (*)

7.6

48

48 (*)

48

150

35

150

1.20

0.28

1.20

4000

4.5

-

2500

-

-55 to 150

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

THERMAL DATA

TO-220

I2PAK

D2PAK

TO-220FP

TO-247

Rthj-case Thermal Resistance Junction-case Max

0.83

3.6

0.83 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (#)

60

°C/W

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

50 °C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

Unit

12

A

400

mJ

GATE-SOURCE ZENER DIODE

Symbol

Parameter

BVGSO

Gate-Source Breakdown

Voltage

(#) When mounted on minimum Footprint

Test Conditions

Igs=± 1mA (Open Drain)

Min.

30

Typ.

Max. Unit

V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient

and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid

the usage of external components.

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