SMD5962-92324 Просмотр технического описания (PDF) - Cypress Semiconductor
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SMD5962-92324 Datasheet PDF : 15 Pages
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STK11C68-5 (SMD5962-92324)
AC Switching Characteristics
SRAM Read Cycle
Parameter
Cypress
Parameter
Alt
tACE
tRC [4]
tAA [5]
tDOE
tOHA [5]
tLZCE [6]
tHZCE [6]
tLZOE [6]
tHZOE [6]
tPU [3]
tPD [3]
tELQV
tAVAV,
tELEH
tAVQV
tGLQV
tAXQX
tELQX
tEHQZ
tGLQX
tGHQZ
tELICCH
tEHICCL
Description
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
35 ns
Min Max
35
35
35
15
5
5
13
0
13
0
35
45 ns
Min Max
45
45
45
20
5
5
15
0
15
0
45
Switching Waveforms
Figure 6. SRAM Read Cycle 1: Address Controlled [4, 5]
55 ns
Min Max
55
55
55
35
5
5
25
0
25
0
55
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
W5&
$''5(66
'4 '$7$287
$''5(66
&(
2(
'4 '$7$287
W$$
W2+$
'$7$9$/,'
Figure 7. SRAM Read Cycle 2: CE and OE Controlled [4]
W5&
W/=&(
W$&(
W3'
W+=&(
W'2(
W/=2(
W+=2(
'$7$9$/,'
W38
$&7,9(
,&&
67$1'%<
Notes
4. WE must be High during SRAM Read cycles.
5. I/O state assumes CE and OE < VIL and WE > VIH; device is continuously selected.
6. Measured ± 200 mV from steady state output voltage.
Document Number: 001-51001 Rev. *A
Page 7 of 15
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