SMD5962-92324 Просмотр технического описания (PDF) - Unspecified
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SMD5962-92324 Datasheet PDF : 10 Pages
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STK11C68-M
READ CYCLES #1 & #2
(VCC = 5.0V ± 10%)
SYMBOLS
NO.
#1, #2
Alt.
PARAMETER
STK11C68-35M
MIN MAX
STK11C68-45M
MIN MAX
STK11C68-55M
MIN MAX
UNITS
1
tELQV
2
tAVAVg
3
tAVQVh
tACS
tRC
tAA
Chip Enable Access Time
Read Cycle Time
Address Access Time
4
tGLQV
tOE Output Enable to Data Valid
5
tAXQX
tOH Output Hold After Address Change
6
tELQX
7
tEHQZi
tLZ
Chip Enable to Output Active
tHZ Chip Disable to Output Inactive
8
tGLQX
tOLZ Output Enable to Output Active
9
tGHQZi
tOHZ Output Disable to Output Inactive
10
tELICCHe
tPA Chip Enable to Power Active
11
tEHICCLc,e
tPS
Chip Disable to Power Standby
11A
tWHQV
tWR Write Recovery Time
35
45
55
ns
35
45
55
ns
35
45
55
ns
20
25
25
ns
5
5
5
ns
5
5
5
ns
17
20
25
ns
0
0
0
ns
17
20
25
ns
0
0
0
ns
35
45
55
ns
45
55
65
ns
Note c: Bringing E high will not produce standby currents until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.
Note e: Parameter guaranteed but not tested.
Note g: For READ CYCLE #1 and #2, W must be high for entire cycle.
Note h: Device is continuously selected with E low and G low.
Note i: Measured ± 200mV from steady state output voltage.
READ CYCLE #1 g,h
ADDRESS
DQ (Data Out)
W
5
tAXQX
11A
tWHQV
2
tAVAV
3
tAVQV
DATA VALID
READ CYCLE #2 g
ADDRESS
E
G
DQ (Data Out)
ACTIVE
ICC
STANDBY
W
10
tELICCH
2
tAVAV
6
tELQX
1
tELQV
4
tGLQV
8
tGLQX
11A
tWHQV
11
tEHICCL
7
tEHQZ
9
tGHQZ
DATA VALID
4-33
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