SST2604 Просмотр технического описания (PDF) - Secos Corporation.
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SST2604 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2604
5.5A, 30V,RDS(ON) 45mΩ
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25oC)
IDSS
Drain-Source Leakage Current(Tj=55oC)
Static Drain-Source On-Resistance2
RD S(O N )
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.02
_
_
_
_
_
_
6
2
3
6
8
15
4
440
105
35
7
Max.
_
_
3.0
±100
1
25
45
65
10
_
_
_
_
_
_
705
_
_
_
Unit
V
o
V/ C
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
V
VDS=VGS, ID=250uA
nA
VGS=±20V
uA
VDS=30V,VGS=0
uA
VDS=24V,VGS=0
VGS=10V, ID=4.8A
mΩ
VGS=4.5V, ID=2.4A
ID=4.8A
nC
VDS=24V
VGS= 4.5V
VDD=15V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=15Ω
VGS=0V
pF
VDS=25V
f=1.0MHz
S
VDS =10V, ID=4.8A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Change
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
15
7
Max.
1.2
_
_
Unit Test Condition
V
IS=4.8A, VGS=0V.
nS
IS=4.8A , VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
Page 2 of 4
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