SST2604 Просмотр технического описания (PDF) - Secos Corporation.

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SST2604

5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET

Secos Corporation. 

Elektronische Bauelemente

SST2604

5.5A, 30V,RDS(ON) 45mΩ

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

The SST2604 utiltzed advance processing techniques to achieve the lowest

possible on-resistance, extermely efficient and cost-effectiveness device.

The SST2604 is universally used for all commercial-industrial applications.

Features

* Lower Gate Charge

* Fast Switching Characteristic

* Small Footprint & Low Profile Package

D

G

S

SOT-26

1.90REF

0.95REF 0.95REF

0.45 REF

2.60

3.00

1.2 REF

0.60 REF

1.40

1.80

0.30

0.55

2.70

0.10 Max

3.10

o

0

0.7

1.45

o

10

Dimensions in millimeters

D

D

S

6

5

4

Date Code

2604

1

2

3

D

D

G

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

3

Continuous Drain Current,VGS@4.5V

3

Continuous Drain Current,VGS@4.5V

Pulsed Drain Current1,2

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Symbol

VDS

VGS

ID@TC=25oC

ID@TC=70oC

IDM

PD@TC=25oC

Tj, Tstg

Ratings

30

± 20

5.5

4.4

20

2

0.016

-55~+150

Unit

V

V

A

A

A

W

W /oC

oC

Thermal Data

Parameter

Thermal Resistance Junction-case3

Max.

Symbol

Rthj-c

Ratings

62.5

Unit

oC /W

http://www.SeCoSGmbH.com/

15-Jun-2010 Rev. C

Any changing of specification will not be informed individual

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