SM16GZ51 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
Список матч
SM16GZ51 Datasheet PDF : 5 Pages
| |||
SM16GZ51,SM16JZ51
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
II
Gate Trigger Current
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Commutation
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j−c)
dv / dt
(dv / dt) c
VDRM = Rated
T2 (+) , Gate (+)
VD = 12 V,
RL = 20 Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
VD = 12 V,
RL = 20 Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
ITM = 25 A
VD = Rated, Tc = 125°C
VD = 12 V, ITM = 1 A
Junction to Case, AC
VDRM = Rated, Tj = 125°C
Exponential Rise
VDRM = 400 V, Tj = 125°C
(di / dt) c = −8.7 A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
mA
―
―
30
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
1.8 °C / W
―
300
― V / µs
10
―
― V / µs
MARKING
*NUMBER
*1
TYPE
SYMBOL
M16GZ51
M16JZ51
MARK
SM16GZ51
SM16JZ51
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
Share Link: 