SM16GZ51 Просмотр технического описания (PDF) - Toshiba
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SM16GZ51 Datasheet PDF : 5 Pages
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SM16GZ51,SM16JZ51
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ51,SM16JZ51
AC POWER CONTROL APPLICATIONS
l Repetitive Peak off−State Voltage : VDRM = 400, 600 V
l R.M.S On−State Current
: IT (RMS) = 16 A
l High Commutating (dv / dt)
: (dv / dt) c = 10 V / µs
l Isolation Voltage
: VISOL = 1500 V AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage
SM16GZ51
SM16JZ51
R. M. S. On−tate Current
(Full Sine Waveform Ta = 82°C)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
VISOL
400
600
16
150 (50 Hz)
165 (60 Hz)
112.5
50
5
0.5
10
2
−40~125
−40~125
1500
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
Note 1: di / dt test condition
VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0
―
―
13−16A1A
1
2001-07-10
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