SI4012-A0-GT Просмотр технического описания (PDF) - Silicon Laboratories

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SI4012-A0-GT

CRYSTAL-LESSFSK/OOK RF TRANSMITTER

Silicon Laboratories 

Si4012

Table 4. Low Battery Detector Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)

Parameter

Battery Voltage Measurement

Accuracy

Symbol

Test Condition

Min

Typ

Max Unit

—

2

—

%

Table 5. Optional Crystal Oscillator Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 600 , unless otherwise noted)

Parameter

Crystal Frequency Range

Input Capacitance (GPIO0)

Crystal ESR

Start-up Time

Symbol

Test Condition

GPI0 configured as crystal

oscillator

GPI0 configured as crystal

oscillator

GPI0 configured as crystal

oscillator

Crystal oscillator only,

60 mH motional arm

inductance

Min Typ Max Unit

10

—

13 MHz

—

5

—

pF

—

—

50



—

9

—

ms

Table 6. EEPROM Characteristics

Parameter

Conditions

Min

Program Time

Maximum Count per Counter

Write Endurance (per bit)*

Independent of number of bits

changing values

Using API

—

50000

Note: *API uses coding technique to achieve write endurance of 1M cycles per bit.

Typ

8

1000000

—

Max

40

—

Units

ms

cycles

cycles

Table 7. Low Power Oscillator Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Programmable Frequency Range Programmable divider in pow- .1875

—

24

ers of 2 up to 128

Frequency Accuracy

–1

—

+1

Units

MHz

%

8

Rev 0.1

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