S6785G Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

Список матч

S6785G

SILICON PLANAR TYPE HIGH SPEED THYRISTOR

Toshiba 

S6785G

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Repetitive Peak Off−State Current and

Repetitive Peak Reverse Current

Peak On−State Voltage

Gate Trigger Voltage

Gate Trigger Current

Gate Non−Trigger Voltage

Gate Non−Trigger Current

Turn−On Time

Turn−Off Time

Critical Rate of Rise of Off−State Voltage

Holding Current

Thermal Resistance

SYMBOL

TEST CONDITION

MIN. MAX. UNIT

IDRM

IRRM

VTM

VGT

IGT

VGD

IGD

tgt

tq

dv / dt

IH

Rth (j−c)

―

VDRM =VRRM = Rated, Tj = 125°C

―

ITM = 20A

―

―

VD = 6V, RL = 10Ω

―

0.2

VD = Rated, Tc = 100°C

0.2

VD = Rated, ITM = 3A, IG = 120mA, tgr < 1µs ―

VD = Rated, ITM = 20A, VG = − 2.5V,

dv / dt ≥ 100V / µs, Tc = 90°C

―

VD = Rated, RGK = 100Ω, VG = −2.5V,

Tc = 125°C, Exponential Rise

100

RL = 10Ω

―

Junction to Case, DC

―

1.0

mA

2.0

2.0

V

1.5

V

25.0 mA

―

V

―

mA

3.0

µs

3.5

µs

― V / µs

80.0 mA

4.0 °C / W

MARKING

NUMBER

*1

SYMBOL

TYPE

S6785G

MARK

S6785G

Example

*2

8A : January 1998

8B : February 1998

8L : December 1998

2

2001-07-10

Share Link: